Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in Si O 2 glasses

Fictive temperature Tf and fluorine F -doping concentration dependences of self-trapped holes STHs in silica glasses created by UV irradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among Tf, F-doping concentration, Si–O bond length, and Si–O–Si bond angle was elucidated. We conclude that the change in both Tf and F doping can modify the network of SiO2 glass, leading to the suppression of the formation of STHs. © 2005 American Institute of Physics. DOI: 10.1063/1.1980536